Thermal performance of diamond field-effect transistors

In this report, the thermal performance of a hydrogen (H)-terminated diamond field-effect transistor (FET) is investigated using Raman spectroscopy and electrothermal device modeling. First, conductivity (κdiamond) active channel was determined by measuring temperature rise transmission line measurement structures under various heat flux conditions nanoparticle-assisted thermometry. Using approach, κdiamond estimated to be 1860 W/m K with 95% confidence interval ranging from 1610 2120 K. conjunction measured electrical output characteristics, κ used as an input parameter for model H-terminated FET. The simulated response showed good agreement surface measurements acquired These diamond-based were highly efficient at dissipating resistances low ∼1 mm K/W. calibrated model, FET able operate very high power density 40 W/mm ∼33 Finally, resistance these lateral FETs compared based on other ultrawide bandgap materials (Al0.70Ga0.30N, β-Ga2O3) wide GaN benchmarking. results indicate that transistors can up ∼10× lower than GaN-based devices ∼50× UWBG devices.